| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which attains fast writing operation and low-voltage writing operation. SOLUTION: The semiconductor storage device is provided with two second conductive diffusion layers 141 and 142 provided in a first conductive semiconductor layer 101, a channel area provided between the two diffusion layers, a gate electrode 112 provided on the channel area through a gate insulation film 111, gate side wall insulation films 11 and 12 provided on the side walls of the gate electrode 112, and electric charge holders arranged in the gate side wall insulation films and made of material having a function of accumulating the electric charge. The two diffusion layers 141 and 142 are provided so as to overlap with the gate electrode, and impurity concentration which gives the second conductive type of one diffusion layer in the vicinity of the end of the gate electrode is lower than impurity concentration which gives the second conductive type of the other diffusion layer in the vicinity of the end of the gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
|
