FORMING METHOD OF INSULATING FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND PLASMA CVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve an insulating film by sufficiently performing deviation of an organic material gas while suppressing an increase in temperature in forming the insulating film using the organic material gas as a gas to be a material by a plasma CVD method. SOLUTION: A forming method of an insulating film is executed using a plasm CVD method on a substrate. In the plasma CVD method, the organic material gas is used as a gas to be a material of an insulating film, and a high-frequency power applied for generating plasma is applied with a constant time interval. COPYRIGHT: (C)2008,JPO&INPIT