发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser aberration, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.
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申请公布号 |
US2007254474(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20070790723 |
申请日期 |
2007.04.27 |
申请人 |
SHINOMIYA HIDEO;HIROTA JUN;MATSUO MIE;KANEKO HISASHI |
发明人 |
SHINOMIYA HIDEO;HIROTA JUN;MATSUO MIE;KANEKO HISASHI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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