发明名称 |
Silicon Semiconductor Substrate Heat-Treatment Method and Silicon Semiconductor Substrate Treated by the Method |
摘要 |
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
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申请公布号 |
US2007252239(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20050578814 |
申请日期 |
2005.04.22 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
MAEDA SUSUMU;SUGIMAN TAKAHISA;SADOHARA SHINYA;YOSHINO SHIRO;NAKAMURA KOUZO |
分类号 |
H01L21/322;H01L29/167 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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