发明名称 MONITORING IONIZING RADIATION IN SILICON-ON INSULATOR INTEGRATED CIRCUITS
摘要 A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.
申请公布号 US2007252088(A1) 申请公布日期 2007.11.01
申请号 US20060380736 申请日期 2006.04.28
申请人 ABADEER WAGDI W;CANNON ETHAN H;COX DENNIS T;TONTI WILLIAM R 发明人 ABADEER WAGDI W.;CANNON ETHAN H.;COX DENNIS T.;TONTI WILLIAM R.
分类号 G01T1/02 主分类号 G01T1/02
代理机构 代理人
主权项
地址