SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device is provided to prevent an end of a semiconductor layer and a gate electrode from being short-circuited with each other by thickening an insulation layer for insulating an overlap region of the end of the semiconductor layer and the gate electrode as compared with an insulation layer covering the center of the semiconductor layer. A semiconductor layer(32) is formed on an insulated surface. A gate electrode(34) is formed on the semiconductor layer. An insulation layer is formed between the semiconductor layer and the gate electrode. The insulation layer includes a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region with the second thickness covers the end of the semiconductor layer overlapping the gate electrode. A third region of the semiconductor layer covered with the gate electrode has a third thickness, and the end of the semiconductor layer has a fourth thickness less than the third thickness.