| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low threshold value, and to provide a method of manufacturing the same by stabilizing the transverse mode. SOLUTION: The nitride semiconductor laser element including a substrate, a nitride semiconductor layer which is stacked on the substrate and has a ridge on its surface, a first protective film covering a surface of the nitride semiconductor layer at least on both sides of the ridge, and an electrode on the ridge and the first protective film, wherein a void is disposed between the first protective film and the electrode or a void surrounded by the first protective film and the electrode is provided on both sides of the ridge on the nitride semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT |
