| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning solution capable of efficiently removing particles, such as an impurity metal, an Impurity inorganic material, an abrasive grain, and the like, in surfaces of a metal film or the like formed on a substrate, such as a silicon wafer or the like; and to provide a cleaning method using it. SOLUTION: The cleaning solution is used after a chemical mechanical polishing process in production of a semiconductor device, and contains a compound represented by a general formula (I) and an organic acid. In the general formula (I), R represents a hydrocarbon group, and n and m each independently represent an integer of 2 or more. COPYRIGHT: (C)2008,JPO&INPIT
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