| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film field effect transistor whereby a crystalline organic thin film having a high mobility can be formed only on its source and drain electrodes including its channel portion. SOLUTION: In the manufacturing method of a thin-film field effect transistor, the substrate wherein a gate insulating film 22 and source and drain electrodes 21 that have a channel portion 23 are formed is subjected to its surface processing by such an organic cyanide as octyltrichlorosilane, and on the substrate subjected to this surface processing, there is disposed the solution comprising the mixture of such an acene-based compound as pentacene with such an organic solvent as trichlorobenzene, and thereafter, a crystalline organic thin film 30 made of the acene-based compound is formed by removing the organic solvent. COPYRIGHT: (C)2008,JPO&INPIT
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