发明名称 Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
摘要 There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.
申请公布号 US2007254401(A1) 申请公布日期 2007.11.01
申请号 US20070797131 申请日期 2007.05.01
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NISHIURA TAKAYUKI;ISHIBASHI KEIJI
分类号 H01L29/06;H01L21/00;H01L21/302 主分类号 H01L29/06
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