| 摘要 |
A thin film transistor substrate, a method of manufacturing the same and a method of manufacturing a liquid crystal display including the same, in which a process of patterning an active pattern and a storage electrode pattern for a storage capacitor and a process of implanting impurity ions into the storage electrode pattern are performed using a single half-tone photo mask, so that the entire manufacturing process can be simplified. A gate insulation film is formed on the active pattern and the storage electrode pattern, so that surface damage that may occur during an ashing process can be prevented. The ion implantation is performed in a state where a stepped photoresist mask is formed to pattern the active pattern and the storage electrode pattern and a photoresist pattern on the storage electrode pattern is then removed, so that the an entire manufacturing process can be simplified. |
