APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL

摘要

Disclosed is an apparatus for growing a nitride single crystal by using a flux (7) containing an easily oxidizable substance. The apparatus comprises a crucible (1) for containing the flux (7), a pressure vessel (20) for housing the crucible (1) and being filled with an atmosphere containing at least a nitrogen gas, furnace members (15A, 15B) arranged outside the crucible (1) in the pressure vessel (20), heaters (17, 18) fixed to the furnace members, and an alkali-resistant, heat-resistant metal layers (16A, 16B) covering the furnace members.