METHOD FOR DEPOSITING Ti FILM

摘要

In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 µm or less and/or an aspect ratio of 10 or more is arranged. While introducing a processing gas containing TiCl<SUB>4</SUB> gas and H<SUB>2</SUB> gas, a high frequency power is supplied from a high frequency power supply (34) to the shower head (10) and a plasma is formed between them. A Ti film is deposited on the wafer by accelerating the reaction of processing gas by the plasma. The high frequency power from the high frequency power supply (34) and/or the flow rate or partial pressure of TiCl<SUB>4</SUB> gas is controlled such that the potential of plasma is 900V or less, and the Ti film is deposited under such conditions.