| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which can form a Schottky barrier diode of high performance and other semiconductor devices in a same chip, while controlling the increase in process number. SOLUTION: An silicon oxide film 43 is deposited on a substrate 31 wherein an n-channel MISFETQn is formed. After removing selectively a gate electrode 38 and the silicon oxide film 43 on an n<SP>+</SP>-type semiconductor region 42, Co film is deposited on the substrate 31. Then, a CoSi<SB>2</SB>layer 44 is formed on the n<SP>+</SP>-type semiconductor region 42 and the gate electrode 38 by carrying out heat treatment to the substrate 31. Subsequently, a silicon nitride film 45 is deposited on the substrate 31. After forming an opening 46 which reaches the substrate 31 by removing the silicon nitride film 45 and the silicon oxide film 43 of an anode formation of the Schottky barrier diode; a Ti film is deposited on the substrate 31 including the inside of the opening 46. Thus, a TiSi<SB>2</SB>layer 47 is formed so as to serve as an anode of the Schottky barrier diode at the bottom of the opening 46 by carrying out heat treatment to the substrate 31. COPYRIGHT: (C)2008,JPO&INPIT |
