| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor having favorable transistor characteristics and operation stability. SOLUTION: In the field effect transistor, a channel layer 11, a source electrode 13, a drain electrode 14, a gate insulating layer 12, and a gate electrode 15 are formed on a substrate 10. The channel layer is composed of an amorphous oxide, and the gate insulating layer is composed of an amorphous oxide containing Y. The amorphous oxide can be used containing Y, for example, an oxide including Y, and Mn or Ti with a composition to be made into a perovskite structure when it is formed under the condition of crystallization. COPYRIGHT: (C)2008,JPO&INPIT
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