| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an MISFET having a highly reliable pocket structure in which gate depletion is suppressed while preventing the increase of junction capacity between a source-drain and a substrate. SOLUTION: After forming a gate electrode 11 on the surface of a substrate 17 through a gate insulating film 13, As is ion-implanted by using the gate electrode 11 as a mask to form a source-drain expansion region 15. Then a sidewall 12 is formed on the side surface of the gate electrode 11, and As is ion-implanted by using the gate electrode 11 and the sidewall 12 as masks. Consequently, a source-drain expansion region 14 is formed on the surface of the substrate 17 simultaneously with the formation of an amorphous layer 18. Then B is obliquely ion-implanted by using the gate electrode 11 and the sidewall 12 as masks to form a packet region 16 surrounding the source-drain expansion region 15. The pocket region 16 is formed deeper than the source-drain expansion region 15 and shallower than the source-drain expansion region 14. COPYRIGHT: (C)2008,JPO&INPIT
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