| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method which can form a semiconductor device by epitaxial growth without segregating an impurity; and to provide a semiconductor device manufacturing method which can shallowly keep the depth of diffusion of the impurity on surface of the semiconductor substrate by elevating source/drain in an application of the film forming method. SOLUTION: The film forming method, which forms a semiconductor layer containing arsenic by epitaxial growth, has a term when elevates a flow of an arsine (AsH<SB>3</SB>) among film forming gases supplied into an epitaxial growth atmosphere adjusted to the atmospheric pressure from zero to a predetermined flow in the beginning of film forming. COPYRIGHT: (C)2008,JPO&INPIT
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