METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the degradation of a ferroelectric film even when a micro ferroelectric memory is manufactured. SOLUTION: An aluminum oxide film 150 is formed by ALD method to cover a ferroelectric capacitor 100 formed above a semiconductor substrate, and then it is annealed in an oxidative gas atmosphere containing ozone (O3) having strong oxidizing function, thereby refining the aluminum oxide film 150. Thus, the invasion of hydrogen or the like into a ferroelectric film 100b is prevented, and the reduction of the ferroelectric film 100b is avoided. COPYRIGHT: (C)2008,JPO&INPIT