Improvements in or relating to methods of alloying to semiconductor bodies

摘要

In a process for forming an alloy junction on a semi-conductor such as silicon or germanium, a metal or alloy in the solid state, e.g. aluminium or tin-aluminium, is applied to the surface of the semi-conductor and heated above 500 DEG C. in the presence of an alkali metal halide flux which is also heated and is separated from the alloying material. As shown in Fig. 1 an n-type silicon body is placed in a recess of a graphite body 2 and a eutectic mixture of NaF and NaCl is placed in recess 6. A pellet 8 is placed on the silicon body 5, a graphite cover plate 3 is placed in position and the assembly is heated to 750 DEG C. in hydrogen to form a p-n type junction. Lead or bismuth may also be used as the alloying material.