发明名称 |
MOCVD reactor without metalorganic-source temperature control |
摘要 |
Methods and systems permit fabricating structures using liquid sources without active temperature control. A substrate is disposed within a substrate processing chamber. A liquid source of a group-III precursor is provided in a bubbler. A push gas is applied to the liquid source to drive the group-III precursor into a vaporizer. A carrier gas is flowed into the vaporizer. A flow of vaporized group-III precursor carried by the carrier gas is injected from the vaporizer into the processing chamber. A nitrogen precursor is flowed into the processing chamber. A group-III nitride layer is deposited over the substrate with a thermal chemical vapor deposition within the processing chamber using the vaporized group-III precursor and the nitrogen precursor.
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申请公布号 |
US2007254100(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20060411672 |
申请日期 |
2006.04.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NIJHAWAN SANDEEP;WASHINGTON LORI;SMITH JACOB;KWONG GARY;BOUR DAVID;EAGLESHAM DAVID |
分类号 |
C23C16/00;B05C11/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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