发明名称 Lithography transfer for high density interconnect circuits
摘要 A method for fabricating an interconnect comprising providing a carrier substrate, wherein the carrier substrate comprises a plurality of interconnect traces and a plurality of input/output contacts; providing a flexible substrate having a first side and a second side, disposing the second side of the sacrificial layer onto the first side of the flexible substrate to form a first assembly, disposing the carrier substrate onto the first assembly; and removing the sacrificial layer and the carrier substrate to form the interconnect.
申请公布号 US2007254468(A1) 申请公布日期 2007.11.01
申请号 US20070824206 申请日期 2007.06.29
申请人 GENERAL ELECTRIC COMPANY 发明人 BURDICK WILLIAM E.JR.;ROSE JAMES W.;DUROCHER KEVIN M.;SABATINI JAMES E.
分类号 H01L21/3205 主分类号 H01L21/3205
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