| 摘要 |
<p>A hybrid wafer comprises a single-crystal Si<SUB>x</SUB>Ge<SUB>1-x</SUB> layer (15), where 0 = x = 1, a high thermal conductivity layer (10), and between the single-crystal Si<SUB>x</SUB>Ge<SUB>1-x</SUB> layer (15) and the high thermal conductivity layer (10), an intermediate layer (21) having a thickness of between 1 nanometer and 1 micrometer and comprising at least one amorphous or polycrystalline Si<SUB>x</SUB>Ge<SUB>1-x</SUB> layer (21a), where 0 = x = 1.</p> |
| 申请人 |
BERG, SOEREN;OLSSON, JOERGEN;VALLIN, OERJAN;SMITH, ULF |
发明人 |
BERG, SOEREN;OLSSON, JOERGEN;VALLIN, OERJAN;SMITH, ULF |
