| 摘要 |
A semiconductor device comprising an interlayer insulating film (30) formed over a semiconductor substrate (10) and a ferroelectric capacitor (46) which has a lower electrode (38) formed over the interlayer insulating film (30) and having a conductive film (36) of a noble metal or a noble metal oxide, a ferroelectric film (42) formed over the lower electrode (38), and an upper electrode (44) formed over the ferroelectric film (42), wherein the lower electrode (38) integrally has a plug portion (38a) buried in a contact hole (32a) made in the interlayer insulating film (30) and connected to source/drain regions (22a).
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