发明名称 SEMICONDUCTOR SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To actualize a semiconductor substrate capable of preventing the occurrence of particles due to ablation. <P>SOLUTION: According to the semiconductor substrate 21 of this embodiment, a protective layer 61 opaque to laser light L is formed on the surface of a region 1 before a reformed region forming process is carried out, so that when the surface of the region 1 is irradiated with the laser light L in the reformed region forming process, the laser light L is weakened or intercepted, thereby the occurrence of the particles due to the ablation can be prevented. Therefore, the semiconductor substrate 21 capable of preventing the occurrence of the particles due to the ablation can be actualized. Thus, because no particle adheres to a semiconductor chip, reduction in yield and degradation in quality of the product due to the occurrence of the particles can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2007287976(A) 申请公布日期 2007.11.01
申请号 JP20060114429 申请日期 2006.04.18
申请人 DENSO CORP 发明人 SUGIURA KAZUHIKO
分类号 H01L21/301;B23K26/00;B23K26/18;B23K26/38;B23K26/40;B23K101/40 主分类号 H01L21/301
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