| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device that can form an excellent insulating film between a control electrode and a charge accumulating layer. SOLUTION: The method for manufacturing semiconductor device comprises a first insulating film 12 formed on a semiconductor substrate 11, a charge accumulating layer 31 formed on the first insulating film, a second insulating film 30 formed on the charge accumulating layer, and a control electrode 25 formed on the second insulating film. A step for forming the second insulating film further comprises the steps of: forming an insulating film 21 including silicon using a film forming gas not including chlorine; and forming an insulating film 22 including oxygen and a metal element on the insulating film including silicon. COPYRIGHT: (C)2008,JPO&INPIT
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