发明名称 PIEZOELECTRIC FILM DEVICE
摘要 <p>Disclosed is a piezoelectric film device (10) comprising a substrate (11), a lower electrode (12), a piezoelectric film (15) and an upper electrode (16). The substrate (11) comprises a thin diaphragm portion (11a) and a thick portion (11b) surrounding the diaphragm portion. The lower electrode (12) is so formed on the substrate (11) as to extend over the thin diaphragm portion (11a) and the thick portion (11b). The piezoelectric film (15) is formed on the lower electrode (12). The upper electrode (16) is so formed on the piezoelectric film (15) as to face the thin diaphragm portion (11a), and comprises an upper electrode main body (16a) and a connecting portion (16b). The upper electrode main body (16a) has a planar shape generally analogous to that of the thin diaphragm portion (11a).</p>
申请公布号 WO2007123278(A1) 申请公布日期 2007.11.01
申请号 WO2007JP59283 申请日期 2007.04.23
申请人 NGK INSULATORS, LTD.;OHNISHI, TAKAO;SHIMIZU, HIDEKI;TSUNEOKA, KATSUYUKI 发明人 OHNISHI, TAKAO;SHIMIZU, HIDEKI;TSUNEOKA, KATSUYUKI
分类号 H01L41/09;H01L41/08;H01L41/187;H01L41/193;H02N2/00 主分类号 H01L41/09
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