| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser irradiation method and a laser irradiation apparatus capable of forming a polycrystalline thin film having a large particle size and capable of improving throughput in a laser irradiation method for fusing/crystallizing a semiconductor thin film, by irradiating laser light to a substrate of which the surface has the semiconductor thin film. SOLUTION: The laser irradiation method comprises: a step for gradually scan-irradiating laser light having a prescribed oscillation frequency to the surface of a substrate 16 at a plurality of different irradiation strengths, and forming a plurality of first irradiation areas respectively corresponding to the plurality of irradiation strengths on the substrate 16; a step for collectively illuminating the plurality of first irradiation areas, and simultaneously receiving reflected lights from the plurality of first irradiation areas; a step for judging microcrystallization strength on the basis of the received reflected lights; and a step for determining irradiation strength on the basis of the judged microcrystallization strength, and irradiating laser light having a prescribed oscillation frequency to the surface of the substrate 16 at the determined irradiation strength to form a second irradiation area. COPYRIGHT: (C)2008,JPO&INPIT
|
