| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which a plug is positively filled with a conductor without leaving a void, together with a manufacturing method thereof. SOLUTION: A hole 5 for a plug 4 is formed on a multilayer insulating layer 2 on a semiconductor layer 1, and then a metal thin film 33 is formed before executing wet etching. In this way, the wall surface of the hole 5 is covered with the metal thin film 33. By executing etching in this state, the wall surface of the multilayer insulating layer 2 is protected from an etching solution. In this way, a step can be prevented from being formed on the wall surface of the hole 5, irrespective of the film quality of each of layers of the multilayer insulating layer 2. Accordingly, since a shape having a large diameter is prevented on the deep portion of the hole 5, the void is not left in filling the plug 4. COPYRIGHT: (C)2008,JPO&INPIT
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