| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a silicon single crystal with less crystal defects and to provide a method for determining the stabilization conditions. SOLUTION: In the method for manufacturing a silicon single crystal 11 by a CZ (Czochralski) process upon pulling the crystal, a cooling step is carried out to cool the silicon single crystal 11 by a cooler 24 disposed to surround the silicone single crystal and by a heat shield 23 disposed to surround the outside and the underside of the cooler 24, and an Ms controlling step is carried out to preliminarily control the distance (Ms) from a lower face of the heat shield 23 disposed under the cooler 24 to the surface of a silicon melt 23 so as to determine an allowable range of pulling speed for obtaining the silicon single crystal 11 with less crystal defects, wherein the crystal is pulled at pulling speed within the determined allowable range. COPYRIGHT: (C)2008,JPO&INPIT
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