| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal and a silicon carbide single crystal wafer having no crystal defect, and to provide a method for manufacturing the crystal. SOLUTION: The method for manufacturing a silicon carbide single crystal is carried out by a sublimation recyrstallization method using a seed crystal (a silicon carbide single crystal) 1, wherein a silicon carbide powder having a specific surface area of 0.001 m<SP>2</SP>/g to 0.05 m<SP>2</SP>/g during packing is used as a source material 2. The polytype of the obtained silicon carbide single crystal is 3C, 4H or 6H. The silicon carbide single crystal is processed and polished to produce a silicon carbide single crystal wafer. The diameter of the silicon carbide single crystal wafer is specified to 50 mm or more. COPYRIGHT: (C)2008,JPO&INPIT
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