Thin film transistor and method of fabricating the same

摘要

A thin film transistor (TFT) and a method of fabricating the TFT may be provided. The TFT may include a substrate; a channel formed on the substrate; source and drain layers formed on both ends of the channel; a gate insulator covering the source and drain layers and the channel; a gate formed on the gate insulator; an ILD (interlayer dielectric) layer covering the gate; and/or source and drain electrodes contacting the source and drain layers through contact holes formed in the ILD layer and the gate insulator.