发明名称 |
JUNCTION BARRIER SCHOTTKY RECTIFIERS AND METHODS OF MAKING THEREOF |
摘要 |
<p>A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p<SUP>+</SUP>-n junctions and self-planapzing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried p<SUP>+</SUP>-n guard ring, a regrown or implanted junction termination extension (JTE) region, or a "deep" mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.</p> |
申请公布号 |
WO2007123803(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
WO2007US08069 |
申请日期 |
2007.04.03 |
申请人 |
SEMISOUTH LABORATORIES, INC.;MAZZOLA, MICHAEL, S.;CHENG, LIN |
发明人 |
MAZZOLA, MICHAEL, S.;CHENG, LIN |
分类号 |
H01L29/872;H01L21/04;H01L29/06;H01L29/24 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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