SEMICONDUCTOR DEVICE

摘要

The present invention can maintain a blocking state, even at a low gate bias voltage, in a diode-containing type of junction FET, and achieves a large saturation current. The junction FET includes: an n⁺ SiC substrate 10 as a drain layer; an n^- SiC layer 11 contiguous to the drain layer as a drift layer; an n⁺ SiC layer 12 formed on the drift layer as a source layer; trench grooves formed ranging from the source layer to a required depth of the drift layer and part of the drift layer as a channel region; and p-type polycrystalline Si formed in the trench grooves as gate regions. The gate region at one side of the channel is electrically shorted to a source electrode to form a p^- emitter of a diode.