METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for forming an isolation layer of a semiconductor device is provided to reduce a GIDL(Gate Induced Drain Leakage) and a parasitic capacitance by reducing a loss in the isolation layer. An insulation film is buried in a trench(T). The insulation film includes an SOG(Spin On Glass) film(47), an aluminum oxide film(48a), and an HDP film(49). The SOG film is formed, such that the trench is not completely buried. The aluminum oxide film is formed on the SOG film. The HDP(High Density Plasma) film is formed to completely bury the trench on the aluminum oxide film.