| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gold wire having high strength and high bondability for connecting a semiconductor. <P>SOLUTION: The gold wire for connecting a semiconductor includes one or more elements selected from each of an element group selected from among calcium and rare earth elements, and an element group selected from titanium, vanadium, chrome, hafnium, niobium, tungsten and zirconium, in a limited amount. The gold wire preferably further includes an appropriate amount of palladium and beryllium. Thus produced gold wire acquires improved strength and Young's modulus due to contained calcium and rare earth element, and simultaneously prevents the degradation of the roundness of a pressure-welded ball in the first bonding step caused by calcium and the rare earth element, due to contained titanium and the like. The gold wire can be a bonding wire which balances mechanical properties and bondability in order to cope with the miniaturization of a semiconductor and the tendency of narrowing a pitch between pads, and consequently contributes to the improvement of workability and a product yield in manufacturing the semiconductor device. <P>COPYRIGHT: (C)2008,JPO&INPIT |
