STENCIL MASK, ITS UTILIZATION METHOD, AND CHARGED PARTICLE INJECTOR UTILIZING IT

摘要

PROBLEM TO BE SOLVED: To make such a profile as the concentration of charged particles is distributed unevenly in a predetermined region on the surface of a substrate processed when that region is irradiated with charged particles.

SOLUTION: The stencil mask 10 is provided in a profile corresponding to a predetermined region on the surface of a semiconductor substrate 50, with a shielding layer 12 in which a plurality of opening 21-27 are formed while being dispersed. The rate of open area of the opening group 21-27 per unit area is distributed unevenly in the profile corresponding to a predetermined region on the surface of the semiconductor substrate 50.

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