| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be more simply formed in a semiconductor device in which a high dielectric constant film is used for a partial gate insulating film. SOLUTION: In the semiconductor device having a first area and a second area; a first gate electrode 4, a second gate electrode 5, and a high dielectric constant gate insulating film 3 are formed in the first area (core part 100). The composition ratio of the first gate electrode 4 is different from that of the second gate electrode 5. The first gate electrode 4 and the second gate electrode 5 are formed on the high dielectric constant gate insulating film 3. In the second area (I/O 200), a third gate electrode 7, a fourth gate electrode 8, and an SiON film 6 or an SiO<SB>2</SB>film are formed. The sort and/or concentration of an impurity element injected into the 3rd gate electrode 7 is different from that of the fourth gate electrode 8. The third gate electrode 7 and the fourth gate electrode 8 are formed on the SiON film 6 or SiO<SB>2</SB>film. COPYRIGHT: (C)2008,JPO&INPIT
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