| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device to form a trench in high precision. SOLUTION: Hydrogen ion H is injected ino a bottom forming part 11 that becomes the bottom part 10a of a trench 10 formed to a Si substrate 6 from an aperture 9a of a mask 9 and the injected hydrogen ion H is subjected to a heat treatment to generate fine bubbles 13. Under this condition, a plasma etching process is executed during direction of plasma impedance. Accordingly, when the plasma etching process reaches the bottom forming part 11, hydrogen filling the fine bubbles 13 is released. Therefore, depth of trench can be controlled in high precision, because a large change B is generated in plasma impedance and thereby it can be detected that the etching process has progressed up to the bottom forming part 11 and moreover it has reached the etching end point. COPYRIGHT: (C)2008,JPO&INPIT
|
