SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device is provided to reduce inner resistance after breakdown of an electrostatic discharge protection device by sufficiently increasing the junction area of a directional zener diode constituting the electrostatic discharge protection device. A passive device for an electrostatic discharge protection is formed on a semiconductor substrate by interposing a field insulation layer, including one or more first-layered semiconductor regions(9), one or more second-layered semiconductor regions(15), and a stacked semiconductor region having a contact region where the first-layered semiconductor region and the second-layered semiconductor region vertically overlap each other and come in contact with each other. The first-layered and second-layered semiconductor regions are divided into one or more predetermined regions of desired island shapes, electrically insulated from each other.