发明名称 |
A CLEANING METHOD FOR CHAMBER OF RAPID THERMAL PROCESS |
摘要 |
A method for cleaning an RTP chamber is provided to reduce a cleaning time by performing an in-situ cleaning process by injecting an oxide gas into the RTP chamber and heating the RTP chamber. An oxide gas is introduced into a chamber(S1). A temperature inside the chamber is raised from an initial temperature to a target temperature(S2). The inside temperature of the chamber is maintained at the target temperature for a predetermined period of time(S3). The inside temperature of the chamber is decreased to the initial temperature(S4).
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申请公布号 |
KR100772256(B1) |
申请公布日期 |
2007.11.01 |
申请号 |
KR20060086152 |
申请日期 |
2006.09.07 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
BAN, SANG HYUN |
分类号 |
H01L21/304;H01L21/3065;H01L21/324 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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