发明名称 A CLEANING METHOD FOR CHAMBER OF RAPID THERMAL PROCESS
摘要 A method for cleaning an RTP chamber is provided to reduce a cleaning time by performing an in-situ cleaning process by injecting an oxide gas into the RTP chamber and heating the RTP chamber. An oxide gas is introduced into a chamber(S1). A temperature inside the chamber is raised from an initial temperature to a target temperature(S2). The inside temperature of the chamber is maintained at the target temperature for a predetermined period of time(S3). The inside temperature of the chamber is decreased to the initial temperature(S4).
申请公布号 KR100772256(B1) 申请公布日期 2007.11.01
申请号 KR20060086152 申请日期 2006.09.07
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 BAN, SANG HYUN
分类号 H01L21/304;H01L21/3065;H01L21/324 主分类号 H01L21/304
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