ZnO SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING ZnO THIN FILM TRANSISTOR AND ZnO THIN FILM TRANSISTOR FABRICATED WITH APPLICATION OF THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a ZnO semiconductor thin film, a method of fabricating ZnO thin film transistor and a ZnO transistor fabricated with the application of the method.

SOLUTION: The method of fabricating a ZnO semiconductor thin film comprises: a step of forming a ZnO thin film on a surface in an oxygen atmosphere; a step of forming an oxygen dispersion layer by an oxygen-affinity metal on the ZnO thin film; and a step of dispersing oxygen contained in the ZnO thin film to the oxygen dispersion layer by heat treating the ZnO thin film and the oxygen dispersion layer. The ZnO thin film transistor comprises: a semiconductor channel formed of ZnO; source electrodes and drain electrodes, which are disposed at the both sides of the above semiconductor channel and having a conductive oxygen dispersion layer formed by an oxygen-affinity metal in contact with the above semiconductor channel; a gate for forming electric field to the above semiconductor channel; and a gate insulator layer interposing between the above gate and the semiconductor channel.

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