| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an active matrix substrate in which the reflection of laser beam hardly occurs in applying laser anneal processing to one part of the substrate, and to provide the active matrix substrate, an electro-optical device and electronic equipment. SOLUTION: (a) A silicon oxide film 41, (b) an amorphous silicon film 42A, (c) a silicon oxide film 43, and (d) an amorphous silicon film 44A are laminated on a substrate 10. The amorphous silicon film 44A is patterned so as to remain on only a pixel region 5. Subsequently, (e) the amorphous silicon film 44A and the amorphous silicon film 42A formed on a driving circuit region 6 are crystallized by laser beam irradiation, and polycrystalline silicon films 42P, 44P each having high mobility are formed. The amorphous silicon film 42A formed on the pixel region 5 is not crystallized but remains. The amorphous silicon film 42A and the polycrystalline silicon film 42P having different mobility which are obtained in this way are each used as a semiconductor film of TFT in the pixel region 5 and the driving circuit region 6. COPYRIGHT: (C)2008,JPO&INPIT |
