| 摘要 |
PROBLEM TO BE SOLVED: To provide a means to jumpingly improve the performance of a semiconductor memory device important in industry, in reference to the constitution of a non-volatile type semiconductor memory device driven at a low voltage by a low power consumption. SOLUTION: The source region, drain region and channel region of an insulating gate electric field effect type transistor are respectively positioned on the surface of a semiconductor provided with a plurality of grooves while an electric charge storage region is provided on the channel region through an insulating layer. COPYRIGHT: (C)2008,JPO&INPIT
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