发明名称 ORGANIC THIN FILM TRANSISTOR, AND ITS METHOD FOR MANUFACTURING
摘要 PROBLEM TO BE SOLVED: To provide an organic thin film transistor and its method for manufacturing which can manufacture by a simple wet process, excels in the transistor characteristics, and is excellent in time stability even in atmosphere or under high humidity. SOLUTION: The organic thin film transistor having a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode, and a drain electrode is characterized in that the organic semiconductor material forming the organic semiconductor layer contains 0.05-1,000 ppm of a compound having a condensed ring which is a condensation of at least two or more rings of either aromatic hydrocarbon ring or aromatic heterocycles, or both in a part of the structure and halogens. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007287961(A) 申请公布日期 2007.11.01
申请号 JP20060114225 申请日期 2006.04.18
申请人 KONICA MINOLTA HOLDINGS INC 发明人 TAKEMURA CHIYOKO;SUGITA SHUICHI;HIRAI KATSURA;KITA HIROSHI
分类号 H01L51/05;H01L29/786;H01L51/30;H01L51/40 主分类号 H01L51/05
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