| 摘要 |
Provided is a high-speed, super-low-power-consumption nonvolatile memory with a high thermal stability. A nonvolatile magnetic memory is equipped with high-output tunnel magnetic resistance devices to each of which a free layer with a high thermal stability is applied, while a writing method by spin transfer torque is applied to the memory. The tunnel magnetic resistance device has a free layer including a first ferromagnetic film and the second ferromagnetic film each of which has a body center cubic structure and each of which contains Co, Fe and B. The free layer, additionally, includes a first non-magnetic layer. The tunnel magnetic resistance device has a layered structure formed of the free layer and a pinned layer with a MgO insulating film with a ( 100 ) orientation rock-salt structure interposed in between.
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