METHOD AND APPARATUS FOR A POST EXPOSURE BAKE OF A RESIST

摘要

In a Method for patterning a chemically amplified resist layer, the resist layer is provided on a substrate, the resist layer comprising resist molecules in a first state with a first solubility. Predetermined regions of the resist layer are exposed to a first radiation to generate a catalytic species in the exposed predetermined regions of the resist layer. The resist layer is exposed to a second radiation and resist molecules in the predetermined regions of the resist layer are converted from the first state into a second state with a second solubility, the conversion of a resist molecule being catalyzed by the catalytic species, and the activation energy of the catalyzed conversion of the resist molecule being lowered by the absorption of the second radiation in the resist molecule. The resist layer is developed with a predetermined developer.