METHOD FOR MANUFACTURING SINGLE CRYSTAL OF NITRIDE
摘要
<p>A seed crystal (9) is immersed in a melt (10), which includes flux and a single crystal material, in a growing container (7), and a single crystal (8) of a nitride is formed on the seed crystal (9). A difference (TS-TB) between a temperature (TS) of the gas-liquid interface (14) of the melt (10) and a temperature (TB) of the bottom portion of the melt is 1°C or higher but not higher than 8°C. Preferably the single crystal substrate (9) is vertically placed.</p>
