发明名称 Organo-magneto-resistive sensor arrangement for e.g. position measurement, has electronic thin layer component, where arrangement is formed in such a manner that field generating device causes magneto-resistive change in layer component
摘要 <p>The arrangement has an organic electronic thin layer component e.g. organic field-effect transistor, with three layers, three different electrical contacts and a magnetic field-generating device, where one of the layers of the organic electronic thin layer component is structured. The arrangement is formed in such a manner that the magnetic field-generating device causes a magneto-resistive change in the thin layer component.</p>
申请公布号 DE102006019483(A1) 申请公布日期 2007.10.31
申请号 DE20061019483 申请日期 2006.04.26
申请人 SIEMENS AG 发明人 PAETZOLD, RALPH;SCHMID, GUENTER
分类号 H01L51/05;G01B7/00;G01R15/20;G01R33/09 主分类号 H01L51/05
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