Semiconductor memory device e.g. dynamic RAM, operating method, involves selecting number of data bits corresponding to data item width from memory cells of cell field of device, where selected data bits are combined in groups on data bus

摘要

The method involves simultaneously selecting a number of data bits corresponding to a data item width from memory cells (1) of a cell field (2) of a semiconductor memory device, where the selected data bits are combined in groups on a data bus with another data item width that is small when compared to the former data item width. The data bits are temporally outputted in a distributed manner to several successive edges of a clock signal, where bit lines of memory cells are activated by a common column select line. An independent claim is also included for a semiconductor memory device with a cell field.