| 摘要 |
A manufacturing method of an AFM(Atomic Force Microscopy) cantilever having a FET(Field Effect Transistor) is provided to easily perform simulation for manufacturing the AFM cantilever having the FET by finely controlling length of an effective channel, and to improve yield of a manufacturing process by using low cost photolithography equipment. A manufacturing method of an AFM cantilever having a FET comprises the steps of forming multilayer insulating film in an upper part of a substrate formed sequentially in an order of a first semiconductor substrate, interlayer insulating film and a second semiconductor substrate, sequentially etching the multilayer insulating film, injecting ions having different type from the second semiconductor substrate and forming a source/drain and a channel, etching the second semiconductor substrate and forming a probe(220) and a probe portion(210), forming the insulating film in a region except the probe and the probe portion, and forming a metal electrode in an upper part of a region of the source/drain and the channel, sequentially etching the multilayer insulating film, the second semiconductor substrate, the insulating film and the first semiconductor substrate, and forming a cantilever portion(230), and etching a rear surface of the first semiconductor substrate and forming a handling portion(240). |
